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Molecular Beam Epitaxy Lab

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Presentation
The Laboratory of MBE (L-MBE) is a scientific service developing own research and supporting research of other groups based on group IV semiconductor heterostructures. The L-MBE belongs to the Scientific Service Unit and is also part of the Laboratory of Optical Properties. The service is scientifically coordinated by Dr. M. Isabel Alonso and governed by a commission detailed below. The service is managed according to the regulations established by the commission.

Comission

President:
Prof. Jordi Pascual (UAB)



Secretary:

Dr. M. Isabel Alonso (ICMAB)

Members:
Dr. Jordi Fraxedas (ICMAB)
Prof. Benjamín Martínez (ICMAB)
Dr. Francesc Pérez-Murano (IMB-CNM)

Technical Support
Dr. Josep Oriol Ossó Torné

Equipment

- Ultra-high vacuum system (Omicron) composed of Fast-entry-lock chamber and
main chamber for MBE deposition on 10cm wafers. - Sources:
Electron-beam evaporator for Si.
High temperature effusion cell for Ge.
Carbon sublimation source with a pyrolytic graphite filament.
High temperature effusion cell for B.

Low temperature effusion cell for Sb.

GaP decomposition cell for P2.

- Control instruments:
Process software.
Cross beam mass analyser for Si flux control or RGA.
Rate monitor (UHV quartz microbalance sensor head).
RHEED e-source (30 kV) and screen on lead glass.

 
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Contact Information

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ICMAB-CSIC
Campus de la UAB
08193 Bellaterra, Spain

mobile_phone + 34 935 801 853
printer Fax:+ 34 935 805 729
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Email:
info@icmab.es


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