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Molecular Beam Epitaxy

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Presentation
The Laboratory of MBE (L-MBE) is a scientific service developing own research and supporting research of other groups based on group IV semiconductor heterostructures. The L-MBE belongs to the Scientific Service Unit and is also part of the Laboratory of Optical Properties. The service is scientifically coordinated by Dr. M. Isabel Alonso and governed by a commission detailed below. The service is managed according to the regulations established by the commission.

Comission

    Members
  • Prof. Joan Bausells (IMB-CNM-CSIC)
  • Dr. Javier Rodriguez-Viejo (UAB)
  • Dr. Jordi Fraxedas (CIN2-CSIC)
  • Prof. Teresa Puig (ICMAB-CSIC)
  • Dr. Miquel Garriga (ICMAB-CSIC)

Scientific supervisor

  • Dr. M. Isabel Alonso (ICMAB-CSIC)
Technician
  • José Luis Moreno Tejero

Forms:

Equipment

  • Ultra-high vacuum system (Omicron) composed of Fast-entry-lock chamber and
    main chamber for MBE deposition on 10cm wafers.

    Sources:
    Electron-beam evaporator for Si.
    High temperature effusion cell for Ge.
    Carbon sublimation source with a pyrolytic graphite filament.
    High temperature effusion cell for B.
  • Low temperature effusion cell for Sb.
  • GaP decomposition cell for P2.
  • Control instruments:
    Process software.
    Cross beam mass analyser for Si flux control or RGA.
    Rate monitor (UHV quartz microbalance sensor head).
    RHEED e-source (30 kV) and screen on lead glass.
 
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Contact Information

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ICMAB-CSIC
Campus de la UAB
08193 Bellaterra, Spain

mobile_phone + 34 935 801 853
930 000 [CSIC]
printer Fax:+ 34 935 805 729
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Email:
info@icmab.es



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